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N EW
ILD256
DUAL AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Dimensions in inches (mm)
FEATURES * Each Channel: Guaranteed CTR Symmetry, 2:1 Maximum * Bidirectional AC Input * Industry Standard SOIC-8 Surface Mountable Package * Standard Lead Spacing, .05" * Available in Tape and Reel Option (Conforms to EIA Standard 481-2) DESCRIPTION The ILD256 is a dual channel optocoupler. Each channel consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector. These circuit elements are constructed with a standard SOIC-8 footprint. The product is well suited for telecom applications such as ring detection or off/on hook status, given its bidirectional LED input and guaranteed current transfer ratio (CTR) of 20% at IF= 10 mA. Maximum Ratings Emitter (Each Channel) Continuous Forward Current .........................30 mA Power Dissipation at 25C............................45 mW Derate Linearly from 25C ......................0.5 mW/C Detector (Each Channel) Collector-Emitter Breakdown Voltage...............70 V Emitter-Collector Breakdown Voltage.................7 V Power Dissipation ........................................55 mW Derate Linearly from 25C ....................0.55 mW/C Package Total Package Dissipation at 25C Ambient (LED + Detector) ....................................200 mW Derate Linearly from 25C ......................2.0 mW/C Storage Temperature................... -55C to +150C Operating Temperature ...............-55C to +100C Soldering Time at 260C ............................. 10 sec.
.120.002 (3.05.05) A/K 1 .240 (6.10) K/A 2 C .154.002 L (3.91.05) A/K 3 K/A 4 .016 (.41) .015.002 (.38.05) 40 7 .0585.002 (1.49.05) .125.002 (3.18.05) 8C 7E 6C 5E
Pin One I.D.
.230.002 (5.84.05) .004 (.10) .008 (.20)
.008 (.20) .050(1.27) Typ.
5Max.
.040 (1.02)
.020.004 (.51.10) 2 Plcs.
R.010 Lead coplanarity (.25) Max. .001 Max.
Characteristics (TA=25C)
Sym Emitter (Each Channel) Forward Voltage Reverse Current Detector (Each Channel) Breakdown Voltage Collector-Emitter Emitter-Collector Leakage Current, Collector-Emitter Package DC Current Transfer Symmetry CTR at + 10 mA CTR 20 0.5 1.0 2.0 % IF=10 mA, VCE=5 V BVCEO BVECO ICEO 70 7 5 50 V V nA IC=10 A IE=10 A VCE=10 V VF IR 1.2 0.1 1.55 100 V mA IF=10 mA VR=6.0 V Min. Typ. Max. Unit Condition
CTR at -10 mA
Saturation Voltage, Collector-Emitter Isolation Voltage, Input to Output VCEsat VIO 2500 0.4 VACRMS IF=16 mA, IC=2 mA t=1 min. AUGUST 1995
5-1
Figure 1. LED forward current versus forward voltage
IF - LED Forward Current - mA
60 40 20 25C 0 -55C -20 -40 -60 -1.5 -1.0 -0.5 0.0 0.5 1.0 VF - LED Forward Voltage - V 1.5
Figure 5. Normalized saturated CTR
1.0 Ta = 25C Ta = 50C Ta = 70C Ta = 100C Vce(sat) = 0.4V
0.8
Normalized CTR
85C
0.6 0.4 Normalized to: 0.2 If = 10 mA. Vce =10V Ta = 25C 0.0 .1 1 10 If - LED Current - mA 100
Figure 2. Forward voltage versus forward current
1.4
Figure 6. Normalized CTRcb
1.5 Normalized to:
Vf-Forward Voltage - V
1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1
If=10mA, Ta=25C
Ta = -55C
Normalized CTRcb
1.0
Ta = 25C
0.5 25C 50C 70C 0.0 .1 1 10 100
Ta = 100C
If - Forward Current - mA
1
10
100
If - LED Current -mA
Figure 3. Peak LED current versus duty factor, Tau
10000 If(pk) - Peak LED Current - mA Duty Factor .005 .01 .02 .05 .1 .2 100 .5
Figure 7. Photocurrent versus LED current
1000
Icb - Photocurrent - A
100
1000
t DF = /t
10 25C 70C 1
10 10-6
10-5
10-4
10-3
10-2
10-1
10 0
10 1
.1 .1 1 10 100 If - LED Current - mA
t - LED Pulse Duration - s
Figure 4. Normalized CTR versus If and Ta
2.0 Normalized to : Ta = 25C Ta = 50C Ta = 70C Ta = 100C If = 10 mA, Vce =10V Ta = 25C
Figure 8. Base current versus If and HFE
700 Vce=0.4V, Ta=25C 600
HFE - Transistor Gain
100
Normalized CTR
1.5
1.0
400
300 200
1
0.5
0.0 .1
100
1
10
100
1
10
100
.1 1000
If - LED Current - mA
Ib - Base Current - A
If- LED Current-mA
500
10
ILD256
5-2
Figure 9. Normalized HFE versus Ib, Ta
1.2 Normalized to: 1.0
Figure 11. Base emitter voltage versus base
1.5 Normalized to: Normalized Saturated HFE HFE at Vce = 10V, Icb = 10A Ta = 25C 1.0 Ta = -20C Ta =25C Ta = 50C Ta = 70C Vce(sat) = 0.4V
Ib = 10A
Normalized HFE
Ta = 25C Vce = 10V
0.8 NHFE -20C NHFE 25C NHFE 50C NHFE 70C
0.5
0.6
0.4 1 10 100 Ib - Base Current - A 1000
0.0 1 10 100 1000 Ib - Base Current - A
Figure 10. Normalized saturated HFE versus Ib
1000 100
Figure 12. Collector-emitter leakage current versus temperature
Iceo - Collector-Emitter - nA
10 5
Ib - Base Current - A
Ta = 25C 10 1 .1 .01 .001 0.4
10 4 10 3 10 2 10 1 10 0 10 -1
Vce = 10V TYPICAL
0.5
0.6
0.7
0.8
10 -2 -20
Vbe - Base Emitter Voltage - V
Ta - Ambient Temperature - C
0
20
40
60
80
100
ILD256
5-3

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